Homogeneous liquid phase epitaxial growth of heterojunction mate

Details Homogeneous liquid phase epitaxial growth of heterojunction mate Homogeneous liquid phase epitaxial growth of heterojunction mate

1980-11-12

1982-03-16

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 29576B, H01L 21208

Patent

active

043199372

ABSTRACT:
In accordance with the finding of undesired, non-uniform, heterojunction layers in heterojunction light emitters, it has been determined that completely uniform layers can be grown by growing individual super thin layers (i.e., .ltoreq.200 A) of uniform composition and stacking as many of these layers as desired into a uniform "thick" (.about.0.1.mu.) layer. This growth is accomplished by employing an LPE system wherein the substrate and melt are brought into contact for only the period of time during which the constituents of the melt deposit on the substrate in proper ratios. Steady-state diffusion-limited growth is avoided. The substrate is then removed from the melt, the melt allowed to re-equilibrate, and the process repeated as many times as desired.

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patent: 4274890 (1981-06-01), Varon

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