Homogeneous incorporation of activator element in a storage...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Reexamination Certificate

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C117S087000, C117S921000, C250S328000

Reexamination Certificate

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11015545

ABSTRACT:
A method has been disclosed for manufacturing a storage phosphor for use in a photostimulable phosphor screen or panel comprising a support and a storage phosphor layer, wherein a dopant or activator is incorporated more homogeneously in amorphous and in crystalline phosphors as well, starting with a mixing step of said matrix component and activator component in stoechiometric ratios in order to provide a desired phosphor composition; and more particularly in order to prepare a CsBr:Eu2+phosphor having an optimized sensitivity with respect to its particle size.

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European Search Report, Application No. 03 10 485=42, Apr. 16, 2004, Doslik.
Partial European Search Report, EP 04 10 6617, Mar. 14, 2005 Doslik, N.

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