Homogeneous fine grained metal film on substrate and manufacturi

Details Homogeneous fine grained metal film on substrate and manufacturi Homogeneous fine grained metal film on substrate and manufacturi

1985-12-20

1988-02-23

Swisher, Nancy

Stock material or miscellaneous articles

Structurally defined web or sheet

Including components having same physical characteristic in...

428472, 428469, 428698, 428699, H01L 2172, H01L 2160

Patent

active

047269839

ABSTRACT:
A homogeneous fine grained metal film (6') on a substrate in accordance with the present invention comprises multiple metal layers and intervening layers (14) between the respective metal layers, the intervening layers being formed of a compound of the metal and a reactive gas and serving to suppress growth of grains (12') in the respective metal layers and to suppress electromigration of grain boundaries (13').
In a method for manufacturing a metal film (6') having homogeneous and fine grains on a substrate in accordance with the present invention, one or more intervening layers (14) are formed by introducing a gas reactive with the metal film one or more times during deposition of the metal film, whereby intervening layers of a metal compound are interposed between the successively deposited metal layers. Thus, a metal film of a multilayered structure including multiple metal layers separated by the intervening layers is formed.

REFERENCES:
patent: 4364995 (1982-12-01), Crawford et al.
patent: 4590130 (1986-05-01), Cline
patent: 4613549 (1986-09-01), Tanaka
"Hillock-free Integrated-circuit Metallizations by Al/Al-O Layering", J. Appl. Phys., 52(7), Jul. 1981, pp. 4630-4639.
"Aluminum and Aluminum Alloy Sputter Deposition for VLSI", Solid State Technology, Dec. 1979, pp. 66-72.
"Reduction of Electromigration in Aluminum Films by Copper Doping", IBM J. Res. Develop., Jul. 1970, pp. 461-463.
Technical Report 7901, "Aluminum-Silicon Sputter Deposition", pp. 1-11
"Electromigration of Sputtered Al-Si Alloy Films", by Nagasawa et al., pp. 64-71.

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