Homoepitaxial gallium-nitride-based light emitting device...

Details Homoepitaxial gallium-nitride-based light emitting device... Homoepitaxial gallium-nitride-based light emitting device...

2005-08-30

2005-08-30

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S024000, C438S036000, C438S046000, C438S047000

Reexamination Certificate

active

06936488

ABSTRACT:
A light emitting device comprised of a light emitting semiconductor active region disposed on a substrate comprised of GaN having a dislocation density less than 105per cm2is provided.

REFERENCES:
patent: 5981980 (1999-11-01), Miyajima et al.
patent: 6316785 (2001-11-01), Nunoue et al.
patent: 6362496 (2002-03-01), Nanishi et al.

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