Homo-junction bipolar transistor having high base concentration

Details Homo-junction bipolar transistor having high base concentration Homo-junction bipolar transistor having high base concentration

1990-05-14

1991-08-20

Wojciechowicz, Edward J.

357 20, 357 40, 357 49, 357 55, 357 81, 357 83, 357 87, 357 90, 357 42, 357 43, H01L 2972

Patent

active

050418920

ABSTRACT:
In a homo-junction bipolar transistor suitable for a low temperature operation below 200 K. (particularly below 77 K.), the maximum value of the impurity concentration of an intrinsic base region is set to be at least 1.times.10.sup.18 /cm.sup.3 and the impurity concentration of an emitter region is set to a value lower than this maximum value. Thus, a base resistance can be reduced and a high speed operation becomes possible. Furthermore, bandgap narrowing develops in the intrinsic base region and a common-emitter current gain in the low temperature operation can be kept at a sufficient value. When this homo-junction bipolar transistor is formed together with complementary insulated gate field effect transistors on the surface of a semiconductor substrate, there can be obtained a Bi-CMOS device capable of a high speed operation even in the low temperature operation.

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