Hollow cathode sputter etcher

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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Details

156646, 204192R, 204192EC, 204298, C23C 1500

Patent

active

045212864

ABSTRACT:
There is disclosed a dry process etching or deposition chamber which allows an improvement in process speed and control of directionality over prior art dry process chambers. The etching or deposition chamber is provided with a hollow cathode electrode comprising two parallel electrode surfaces which are maintained at substantially the same electrical potential while a radio frequency potential is applied between the hollow cathode electrode and an anode electrode which is also located within the chamber. During the etching or deposition process, a partial vacuum is maintained in the dry process chamber and a gas is introduced into the chamber to provide a source of halogen ions and carbon or silicon ions under radio frequency excitation these ions forming a chemically reactive plasma. Products of the etching or deposition process can be pumped out of the chamber during the processing step if greater performance is required.

REFERENCES:
patent: 4407712 (1983-10-01), Henshaw et al.
patent: 4462882 (1984-07-01), Horwitz
patent: 4465551 (1984-08-01), Horwitz
Reinberg et al., Extended Abstracts, V. 81-2, Electrochem. Soc.
Ianno et al., J. Electrochem. Soc. 128:2175, 1981.
Pillow, Spectrochimica Acta, vol. 36B, No. 8, pp. 821-843, 1981.
Horwitz, Appl. Phys. Lett. 43(10), 1983.
Griffin et al., IEEE Trans. on Elec. Devices, vol. ED-27, No. 3, 1980.

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