Hollow cathode enhanced magnetron sputter device

Details Hollow cathode enhanced magnetron sputter device Hollow cathode enhanced magnetron sputter device

1985-05-22

1986-05-13

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, 204192E, 156354, 156643, C23C 1500

Patent

active

045884900

ABSTRACT:
A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc-source combined with a conventional plasma sputter etching/deposition system such as a magnetron. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic field and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.

REFERENCES:
patent: 4407712 (1983-10-01), Henshaw
patent: 4431473 (1984-02-01), Okano et al.
patent: 4521286 (1985-06-01), Horwitz
Horwitz App. Phy. Letters 44(11) Jun., 1984, pp. 1041-1044.
Horwitz App. Phys. Lett. 43(10) Nov. 1983, pp. 971-979.
thornton et al. J. Vac. Sci Tech. 12 (1975) pp. 93-96.

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