Hollow-anode glow discharge apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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156643, 118723E, H01L 2100

Patent

active

052483711

ABSTRACT:
Hollow-anode glow discharge apparatus in the form of two-electrode and three-electrode reactors provide, in various embodiments, improved uniformity, efficiency and low-pressure substrate surface processing. In one improved uniformity embodiment for ion-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, multi-sized and evenly-spaced holes. In one improved uniformity embodiment for chemically-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, evenly-spaced holes and a stepped or continuously-variable non-planar profile. In one improved low pressure embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density grid having multiple, evenly-sized and spaced holes of widths large enough to overcome dark space effects. In one improved efficiency selected ion energy embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density source that synergistically cooperates with an apertured grid to provide selected-energy ions at higher densities than heretofore possible. In any embodiment, both build-up on and removal from the substrate are possible.

REFERENCES:
patent: 4318767 (1982-03-01), Hijikata et al.
patent: 4349409 (1982-09-01), Shibayama et al.
patent: 4405435 (1983-09-01), Tateishi et al.
patent: 4477311 (1984-10-01), Mimura et al.
patent: 4498416 (1985-02-01), Bouchaib
patent: 4534314 (1985-08-01), Ackley
patent: 4542712 (1985-09-01), Sato et al.
patent: 4547247 (1985-10-01), Warenback et al.
patent: 4548699 (1985-10-01), Hutchinson et al.
patent: 4550239 (1985-10-01), Uehara et al.
patent: 4563240 (1986-01-01), Shibata et al.
patent: 4584045 (1986-04-01), Richards
patent: 4587002 (1986-05-01), Bok
patent: 4592306 (1986-06-01), Gallego
patent: 4622918 (1986-11-01), Bok
patent: 4631105 (1986-12-01), Caroll et al.
patent: 4661196 (1987-04-01), Hockersmith et al.
patent: 4661228 (1987-04-01), Mintz
patent: 4664062 (1987-05-01), Kamohara et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4670126 (1987-06-01), Messer et al.
patent: 4674621 (1987-06-01), Takahashi
patent: 4675096 (1987-06-01), Tateishi et al.
patent: 4705951 (1987-11-01), Layman et al.
patent: 4713551 (1987-12-01), Layman et al.
patent: 4715764 (1987-12-01), Hutchinson
patent: 4715921 (1987-12-01), Maher et al.
patent: 4717461 (1988-01-01), Strahl et al.
patent: 4724621 (1988-02-01), Hobson et al.
patent: 4756815 (1988-07-01), Turner et al.
patent: 4763602 (1988-08-01), Madan et al.
patent: 4770590 (1988-09-01), Hugues et al.
patent: 4775281 (1988-10-01), Prentakis
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4780169 (1988-10-01), Stark et al.
patent: 4792378 (1988-12-01), Rose et al.
patent: 4825808 (1989-05-01), Takahashi et al.
patent: 4851101 (1989-07-01), Hutchinson
patent: 4852516 (1989-08-01), Rubin et al.
patent: 4854263 (1989-08-01), Chang et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4957588 (1990-09-01), Koshiba et al.
patent: 4971653 (1990-11-01), Powell et al.
patent: 5013385 (1991-05-01), Maher et al.
patent: 5013400 (1991-05-01), Kurasaki et al.
patent: 5102495 (1992-04-01), Maher et al.
Chapman, Brian, "Glow Discharge Processes-Sputtering and Plasma Etching," Plasma Etching, John Wiley & Sons, Inc., New York, .COPYRGT.1980, pp. 326-329.
Horiike, Y., "Chapter 14: Emerging Etching Techniques," VLSI Electronics Microstructure Science, vol. 8, Academic Press, Inc. (Harcourt Brace Jovanovich, Publishers), .COPYRGT.1984, pp. 448-450.
IBM Technical Disclosure Bulletin, vol. 29, No. 1, Jun. 1986, entitled "Vacuum-Compatible Wafer Handler," (2 pages).
Itakura, Hideaki, et al., "Multi-Chamber Dry Etching System," Solid State Technology, Apr. 1986, pp. 209-214.
Maher, Joseph A., Jr., "Plasma Etching of Aluminum and Its Alloys," Report of LFE Corporation, Process Control Division, 1601 Trapelo Rd., Waltham, Mass. 02154, undated, pp. 1-15 plus FIG. 9.
Moslehi, M. M., et al., "Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge," J. Appl. Phys. 58 (6), 15 Sep. 1985, pp. 2416-2419.
Drytek Brochure entitled "Quad System" .COPYRGT.Drytek Inc. 1985, consisting of 11 pages of advertisement, published by Drytek, Inc., 16 Jonspin Road, Wilmington, Mass. 01887.
"Dry Etching Systems," Semiconductor International, a Cahners Publication, Oct. 1985, pp. 49-60.
Declaration of Mr. Mark W. Miller, filed in appln. S/N 07/115,774 consisting of 9 pages of Declaration and 30 pages of enclosures to the Declaration.
Declaration of Mr. Joseph A. Maher, filed in appln. S/N 06/853,775 consisting of 4 pages of Declaration and one sheet of FIG. 1 as enclosure to the Declaration.
Declaration of Mr. Arthur W. Zafiropoulo, filed in appln. S/N 06/853,775 consisting of 5 pages of Declaration and 12 pages of enclosures to the Declaration.
Declaration of Mr. Leslie G. Jerde, filed in appln. S/N 06/853,775 consisting of 5 pages of Declaration and 12 pages of enclosures to the Declaration.
The System 1000, The Semi Group RIE System 100 TC, 6 pages, believed to be published sometime before Mar. 1985, printed in California and available as a machine data sheet in the United States.
GIR 200, Plasma Cassette to Cassette R.I.E.-Planar Plasma Etcher, CIT Alcatel, 10 pages, believed to be published sometime before Feb. 1984, printed in France and available as a machine data sheet in the U.S.
Omni-Etch 10000 Dry Processing System, Perkin-Elmer, 8 pages, dated Sep. 1982, available as a machine data sheet in the United States.
Vactronic PDS-5000 Distributed Multichamber Plasma Processing System, 4 pages, believed to be available sometime in 1981, printed in New York and available as a machine data sheet in the United States.
AutoEtch 480 . . . , 3 pages, believed to be published by Apr. 1982, and available as a machine data sheet in the United States.
Reactive Ion Etching Parameters, Anelva, 4 pages, dated Jan. 1981, printed in California and available as a machine data sheet in the United States.
Single Wafer, High Throughput Plasma Inline 801 Polysilicon and Nitride Etcher, Tegal Corp., 4 pages, Oct. 24, 1983, press release.
Plasma Inline 803 Oxide Dry Etcher, Tegal Corp., 5 pages, dated 1983, printed in California and available as a machine data sheet in the United States.
5000 Planar Etcher, Dionex, 4 pages, Bulletin No. 5000, dated 1979, printed in California and available as a machine data sheet in the United States.
Dionex 5400: Programmable Planar System, 4 pages, Bulletin No. 5400, dated 1979, printed in California and available as a machine date sheet in the United States.
1521, Cassette-to-cassette RIE/plasma production etcher, Tegal Corp., 1 page, apparently dated Apr. 27, 1984, printed in California and available as a machine data sheet in the United States.
1522, Cassette-to-cassette RIE/plasma production etcher, Tegal Corp., 1 page, apparently dated Apr. 27, 1984, printed in California and available as a machine data sheet in the United States.
Fundamentals of Plasma-Etching, Dionex, 8 pages, Bulletin No. 70001, dated 1979, printed in California and available as a machine data sheet in the United States.
Series 5400SCC Cassette-to-Cassette Planar Etcher, Dionex, 2 pages, Bulletin No. 5400SCC, dated 1978, printed in California and available as a machine data sheet in the United States.
Engle, F., "The Multiple Modular-Unit Alternative for Wafer Processing," Microelectronic Manufacturing and Testing, Mar. 1982, pp. 9-11.
Lam, D. K., "Advances in VLSI Plasma Etching," Solid State Technology, Apr. 1982, 5 pages.
"Plasma-Sette System, Broader Applications with Good Competitive Results," Airco Temescal Technical Service Bulletin, No. 83-1, Mar. 4, 1983, pp. 1-9.
Cassette-to-Cassette Load-Lock Plasma/RIE System Plasma Sette II, Temescal, 12 pages, dated May 1983, printed in California and available as a machine data sheet in the United States.
"3-D Interconnect Technologi

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