Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1999-01-06
2000-06-06
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257 53, 257 55, 257438, H01L 31107, H01L 310312, H01L 29165
Patent
active
060722010
ABSTRACT:
An amorphous silicon based hole-injection type "Separate Absorption and Multiplication Avalanche Photodiode" ("SAMAPD") has been invented. The device was made by separating an absorption layer and an avalanche layer from a conventional APD (Avalanche Photodiode). This will make a majority of an voltage bias to go across on the avalanche layer (i.e., a high energy bandgap material) and to enlarge an avalanche multiplication effect (i.e., increasing optical gains). In addition, the voltage bias goes across on the absorption layer will be sufficiently small to reduce a dark current. Using an i-a-Si:H material as the avalanche layer material and an i-a-Si.sub.1-x :Ge.sub.x :H material as the absorption layer material, the hole-injection type SAMPAD yields a very high gain, i.e., 686, at a reverse bias of 16V under an incident light power of P.sub.in =1 .mu.w. The product of this invention is very suitable for use in a long distance optical communication.
REFERENCES:
patent: 4212019 (1980-07-01), Wataze et al.
patent: 5260560 (1993-11-01), Yamanobe
Hwang et al., IEEE Trans On Elec Dev. vol. 40 No. 4 "An a-Si:H/a-Si,Ge:H . . . Detector" pp. 721-726, Apr. 1993.
Hong et al, IEEE Trans On Elec. Dev. vol. 37 No. 8 "Optical . . . Photodiodes" pp. 1804-1808, Aug. 1990.
Fang Yeau-Kuen
Lee Gun-Yuan
Lee Kuen-Hsien
Chang Chi Ping
Jackson, Jr. Jerome
National Science Counsel
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