Ho:LuLF and Ho:Tm:LuLF laser materials

Coherent light generators – Particular active media – Plural active media or active media having plural dopants

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372 10, 372 18, 372 94, 372 41, H01S 314

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active

057426325

ABSTRACT:
A laser host material LuLF (LuLiF.sub.4) is doped with holmium (Ho) and thulium (Tm) to produce a new laser material that is capable of laser light production in the vicinity of 2 .mu.m. The material provides an advantage in efficiency over conventional Ho lasers because the LuLF host material allows for decreased threshold and upconversion over such hosts as YAG and YLF. The addition of Tm allows for pumping by commonly available GaAlAs laser diodes. For use with flashlamp pumping, erbium (Er) may be added as an additional dopant. For further upconversion reduction, the Tm can be eliminated and the Ho can be directly pumped.

REFERENCES:
patent: 4578793 (1986-03-01), Kane et al.
patent: 4648094 (1987-03-01), McCollum et al.
patent: 4974230 (1990-11-01), Hemmati
patent: 4987575 (1991-01-01), Alfano et al.
patent: 5287378 (1994-02-01), Bowman
patent: 5289482 (1994-02-01), Esterowitz et al.
patent: 5420878 (1995-05-01), Kane et al.
Filer, E. D., et al., "YLF Isomorphs fo Ho and Tm Laser Application", Optical Society of America, OSA Proceedings on Advanced Solid State Laser, vol. 20, 1994, pp. 127-130.
Harris, I. R. et al., "the Relationships between crystal growth bbehavior and constitution in the systems LiF-LuF3, LiF-ErF3, and Lif-YF3", Journal of Materials Science, 1983, pp. 1235-1243.
Cockayne, J.G. et al., "The czochralski grpwth and laser characteristics of Li(Lu,Er,Tm,Ho)F4 scheelite single crystals", Journal of Crystal Growth, 1981, pp. 407-413.

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