Hillock-free aluminum layer and method of forming the same

Details Hillock-free aluminum layer and method of forming the same Hillock-free aluminum layer and method of forming the same

2007-06-26

2007-06-26

Lavilla, Michael E. (Department: 1775)

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

C428S336000, C428S650000, C257S750000, C257S771000, C438S688000, C427S123000, C427S250000

Reexamination Certificate

active

10885782

ABSTRACT:
A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.

REFERENCES:
patent: 5518805 (1996-05-01), Ho et al.
patent: 5580800 (1996-12-01), Zhang et al.
patent: 5825437 (1998-10-01), Seo et al.
patent: 6348403 (2002-02-01), Raina et al.
patent: 2003/0068522 (2003-04-01), Wang
patent: 2003/0164350 (2003-09-01), Hanson et al.
patent: 2004/0140490 (2004-07-01), Wang

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