Highly uniform group III nitride epitaxial layers on 100...

Details Highly uniform group III nitride epitaxial layers on 100... Highly uniform group III nitride epitaxial layers on 100...

2008-07-29

2008-07-29

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S183000, C257S190000, C257SE29081, C257SE29104

Reexamination Certificate

active

11149664

ABSTRACT:
A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity in a number of characteristics. These include: a standard deviation in sheet resistivity across the wafer less than three percent; a standard deviation in electron mobility across the wafer of less than 1 percent; a standard deviation in carrier density across the wafer of no more than about 3.3 percent; and a standard deviation in conductivity across the wafer of about 2.5 percent.

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