Highly thermally conductive interconnect structure for intergrat

Details Highly thermally conductive interconnect structure for intergrat Highly thermally conductive interconnect structure for intergrat

1996-10-22

1998-04-28

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, 257753, 257758, 257759, 257764, 257638, H01L 2348, H01L 2352

Patent

active

057448655

ABSTRACT:
A method and structure for improving the thermal conductivity and therefore the heat dissipation of densely interconnected semiconductor circuits, particularly those utilizing low dielectric constant materials by placing a layer of highly thermally conductive material such as diamond film 26 between layers of interconnect metal 22. An embodiment of the present invention allows increased thermal conductivity from the upper levels of metalization to the substrate 10 where structure of the present invention is repeated to form multiple levels of interconnects stacked one upon the other. Further, the diamond layer of the present invention may be used as an effective etch stop or planarization stop. The present invention can be used with known low dielectric constant materials, interlevel dielectrics 30 and planarization techniques with the added benefit of highly thermally conductive diamond film.

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