Highly solar-energy absorbing device and method of making the sa

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126901, 136256, 156651, 156662, 204192P, 204192S, 204298, 428620, 428641, 428333, 428687, 428913, H01L 3100, F24J 302, C23C 1500

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042528658

ABSTRACT:
The invention contemplates a highly solar-energy absorbing device wherein the surface exposed to incident solar energy is a particularly characterized roughness of an amorphous semiconductor material, the particular characterization being that of an array of outwardly projecting structural elements of relatively high aspect ratio and at effective lateral spacings which are or include those in the order of magnitude of wavelengths within the solar-energy spectrum.

REFERENCES:
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Hahn et al., Thick Semiconductor Films for Photothermal Solar Energy Conversion, J. Vac. Sci. Technol., 12 (1975), p. 905.
Cuomo et al., A New Concept for Solar Energy Thermal Conversion, App. Phys. Lett.26 (1975), p. 557.
Peterson et al., Thin Film Coatings in Solar-Thermal Power Systems, J. Vac. Sci. Technol., 12 (1975), p. 174.
Gittleman et al., Optical Properties and Selective Solar Absorption of Composite Material Films, Thin Solid Films, 45 (1977), p. 9.
T. D. Moustakas et al., Preparation of Highly Photoconductive Amorphous Silicon by RF Sputtering, Solid State Communications, vol. 23, No. 3, pp. 155-158.
Richard W. Griffith, Solar Energy Utilization . . . A High Efficiency Amorphous-Silicon Absorber, Conference Record-Solar Technology in the Seventies, vol. 6, Photovoltaics, pp. 205-215.
K. W. Boer, The Solar Spectrum at Typical Clear Weather Days, Solar Energy, vol. 19, pp. 525-538.
W. Paul et al., Doping, Schottky Barrier and P-N Junction Formation in Amorphous Germanium and Silicon, Solid State Communications, vol. 20, No. 10, pp. 969-972.

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