Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Reexamination Certificate
2005-09-26
2009-06-23
Porta, David P (Department: 2884)
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
C250S395000
Reexamination Certificate
active
07550705
ABSTRACT:
A solid-state image sensor (1) with very high sensitivity approaching the single-photon limit is realized with three modular building blocks: (a) a pixel (2.11, 2.12,. . . ) with a photo-site, intermediate photo-charge storage capability as used for correlated double sampling, and an electronic circuit for signal buffering or amplification, (b) a column or row signal line (3.1) to which a plurality of such pixels (2.11, 2.21,. . . ) is connected using transistor switches, incorporating a low-pass filter (30.1), and (c) a readout circuit (4) to which the row signal lines (3.1, 3.2,. . . ) are connected, consisting of a plurality of analog amplifiers (41.1, 41.2,. . . ) with an analog multiplexer (42). Photo-generated signals are read out and the reset level is subtracted either in the analog or in the digital domain, to implement a correlated-double-sampling method.
REFERENCES:
patent: 4808822 (1989-02-01), Manning et al.
patent: 5841126 (1998-11-01), Fossum et al.
patent: 2001/0030699 (2001-10-01), Sakuragi
patent: 2003/0042400 (2003-03-01), Hynecek
patent: 2006/0139251 (2006-06-01), Morosawa et al.
patent: 1 624 490 (2006-02-01), None
patent: 2 762 741 (1998-10-01), None
patent: WO 99/66709 (1999-12-01), None
A. J. P. Theuwissen: “Solid State Imaging with Charge Coupled Devices”, Kluwer Academic Publishers, Dordrecht, 1995 : only the relevent parts concerning “how to process photo-charge signals with the so-called correlated double sampling (CDS) technique to eliminate virtually two noise sources”.
P. Seitz, “Solid-state Image Sensing”, in “Handbook of Computer Vision and Applications”, eds. B. Jahne, H. Haussecker and P. Geissler, pp. 165-122, Academic Press, New York, 1999.
J. Janesick et al. “Sub-electron noise charge coupled devices”, Proc. SPIE, vol. 1242, pp. 238-251, 1990.
A. Krymski et al. describe in “A 2e- Noise 1.3 Megapixel CMOS Sensor”, Proc. 2003 IEEE Workshop on CCDs and advanced image sensors.
I. Inoue et al., “Low dark current pinned photodiode for CMOS image sensor”, Proc. 1999 IEEE Workshop; if this is a entire book. only the relevant parts concerning “pinned photodiodes on CCD and AIS”.
Lustenberger Felix
Seitz Peter
Boosalis Faye
CSEM - Centre Suisse d'Electronique et de Microtechnique SA
Porta David P
Weingarten Schurgin, Gagnebin & Lebovici LLP
LandOfFree
Highly sensitive solid-state image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Highly sensitive solid-state image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly sensitive solid-state image sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4083651