Highly sensitive photoconductive infrared detector

Details Highly sensitive photoconductive infrared detector Highly sensitive photoconductive infrared detector

1997-03-07

1999-05-04

Tokar, Michael J.

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

257466, G01J 102

Patent

active

059006315

ABSTRACT:
A semiconductor crystal infrared detecting portion structure is provided in a photoconductive infrared detector and is provided at opposite ends with first and second electrodes so biased that the first and second electrodes have a positive potential and a ground potential respectively. The semiconductor crystal infrared detecting portion structure has an infrared receiving part so that the semiconductor crystal infrared detecting portion structure comprises a first half region defined between the infrared receiving part and the first electrode and a second half region defined between the infrared receiving part and the second electrode. At least the second half region reduces in section area toward the second electrode to increase a resistance of at least the second half region.

REFERENCES:
patent: 4620210 (1986-10-01), Scavennec et al.
patent: 5241196 (1993-08-01), Huang et al.

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