Highly sensitive high performance sense amplifiers

Details Highly sensitive high performance sense amplifiers Highly sensitive high performance sense amplifiers

1984-12-03

1986-08-05

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307279, 307291, 365203, 365205, H03K 524, H03K 3287, H03K 3356, G11C 706

Patent

active

046045341

ABSTRACT:
An improved voltage sensing circuit is provided which includes a pair of cross-coupled bipolar transistors coupled to a pair of signal nodes, a pair of cross-coupled field effect transistors coupled to the same pair of signal nodes and means for activating the bipolar transistors during a first period of time and then activating the field effect transistors. The bipolar transistors are preferably NPN transistors and the field effect transistors are preferably P channel transistors. The circuit may be conveniently fabricated in complementary metal oxide semiconductor (CMOS) technology.

REFERENCES:
patent: 3993918 (1976-11-01), Sinclair
patent: 4144590 (1979-03-01), Kitagawa et al.
patent: 4150311 (1979-04-01), Matsuda et al.
patent: 4286178 (1981-08-01), Rao et al.
patent: 4494020 (1985-01-01), Konishi
patent: 4542306 (1985-09-01), Ikeda

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