Highly sensitive Hall element

Details Highly sensitive Hall element Highly sensitive Hall element

1977-08-08

1980-05-20

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

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331107G, H03B 700

Patent

active

042041325

ABSTRACT:
A semiconductor capable of exhibiting an electron transfer effect in a high electric field is used as a Hall element. Application of a voltage large enough to give rise to an electron transfer effect to the current input electrodes of the Hall element brings about a decrease in the concentration of electrons contributing to the Hall effect occurring within the semiconductor, an increase in the Hall coefficient and a notable enhancement in the sensitivity of the Hall element.

REFERENCES:
patent: 3195043 (1965-07-01), Burig et al.
patent: 3634780 (1972-11-01), Bosch
patent: 3714473 (1973-01-01), Bartelink et al.
patent: 3731123 (1973-05-01), Matsushita
patent: 3825777 (1974-07-01), Braun

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