Highly selective silicon oxide etching method

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252 793, 134 2, 134 3, 438738, 438743, B44C 122, C03C 2506, C23F 112, H01L 21306

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056351020

ABSTRACT:
A process for selectively removing a porous silicon oxide layer from a substrate having a portion thereon with an exposed dense silicon oxide to be retained on the substrate, the porous silicon oxide layer containing absorbed moisture therein, the process comprising:

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