Highly-selective metal etchants

Details Highly-selective metal etchants Highly-selective metal etchants

2006-08-08

2010-06-22

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S725000, C438S745000, C216S100000

Reexamination Certificate

active

07741230

ABSTRACT:
A highly selective metal wet etchant with an active ingredient comprising one or more types of molecules having two or more oxygen atoms is described. In one embodiment, the wet etchant is utilized to pattern a metal layer in a semiconductor structure. In another embodiment, a highly selective metal wet etchant with an active ingredient comprising one or more types of molecules having two or more oxygen atoms is used to pattern a metal gate electrode in a replacement gate processing scheme.

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International Preliminary Report on Patentability for PCT Application No. PCT/US2007/074269 dated Feb. 19, 2009; 6 pgs.

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