Highly reliable NAND flash memory using five side enclosed...

Details Highly reliable NAND flash memory using five side enclosed... Highly reliable NAND flash memory using five side enclosed...

2008-05-20

2008-05-20

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185260

Reexamination Certificate

active

11506026

ABSTRACT:
A NAND flash memory system with an array of individual charge storage elements, such as floating gates, arranged in a NAND string, each element being capable of selectively storing data in the form of charge there-in during a program or an erase operation, and during a read operation sensing the quantum of charge stored to provide reconstruction of data. Such a memory made with a floating gate that is spaced away from the diffusions and covered on all five sides except the channel side, by the control gate, there by having increased coupling with the associated advantage of lower high voltages, reduced impact of the unwanted disturb conditions, and providing for improved retention and reliability characteristics at higher operating temperatures is disclosed. The main emphasis in this technology is to provide a device with improved retention, endurance, and temperature characteristics meeting the Automotive specifications even with some area penalty.

REFERENCES:
patent: 7227786 (2007-06-01), Thomas
patent: 2005/0265076 (2005-12-01), Forbes
patent: 2005/0276105 (2005-12-01), Yeh et al.
patent: 2006/0262602 (2006-11-01), Nazarian
patent: 2006/0279991 (2006-12-01), Park et al.
patent: 2007/0121380 (2007-05-01), Thomas
patent: 2007/0133289 (2007-06-01), Ma et al.
patent: 2007/0153579 (2007-07-01), Roohparvar et al.

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