Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1991-02-15
1993-03-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
75 1013, 75 1019, 75365, 420417, 420418, 420422, 257751, 257757, 257761, 257763, 257770, H01L 2348
Patent
active
051969165
ABSTRACT:
This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.
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Ando Shigeru
Ishigami Takashi
Kawai mituo
Maki Toshihiro
Obata Minoru
Hille Rolf
Kabushiki Kaisha Toshiba
Loke Steven
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