Highly purified metal material and sputtering target using the s

Details Highly purified metal material and sputtering target using the s Highly purified metal material and sputtering target using the s

1995-05-31

1997-10-21

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257771, H01L 2348, H01L 2352, H01L 2940

Patent

active

056799837

ABSTRACT:
This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

REFERENCES:
patent: 4788160 (1988-11-01), Havemann et al.
patent: 4793854 (1988-12-01), Shimotori et al.
patent: 4896204 (1990-01-01), Hirata et al.
patent: 4897287 (1990-01-01), Berger et al.
patent: 4920073 (1990-04-01), Wei et al.
patent: 5019891 (1991-05-01), Onuki et al.
patent: 5049975 (1991-09-01), Ajika et al.
patent: 5070038 (1991-12-01), Jin
patent: 5087578 (1992-02-01), Endo et al.
patent: 5143866 (1992-09-01), Matsutani
patent: 5175126 (1992-12-01), Ho et al.
patent: 5196916 (1993-03-01), Ishigami et al.
patent: 5345108 (1994-09-01), Kikawa et al.
patent: 5349205 (1994-09-01), Kobayashi et al.
Lee, Seung-Yee, "Ti. Zr Smelting," Non-ferrous Metal Smelting Engineering, Korea, Jan. 25, 1987,pp. 406-408.
Yang, Hun-Young, "Special Melt Refining Method," Iron & Steel Smelting Engineering, Korea, Jan. 25, 1987, pp. 424-425.

Affiliated with

Also associated with

Rating

Highly purified metal material and sputtering target using the s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Highly purified metal material and sputtering target using the s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly purified metal material and sputtering target using the s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1009081