Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1992-01-02
1994-05-03
Wyszomierski, George
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
420417, 420421, C22C 1400
Patent
active
RE0345989
ABSTRACT:
Disclosed is a highly pure titanium which comprises containing not more than 200 ppm of oxygen; not more than 30 ppm each of elements consisting of iron, nickel and chromium, and not more than 0.1 ppm each of elements consisting of sodium and potassium.
Disclosed is also a process for preparing the above highly pure titanium which comprises melting a crude titanium obtained by molten salt electrolysis, in a high vacuum of 5.times.10.sup.-5 mbar or less.
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The New Penguin Dictionary of Electronics, Penguin Books, 1979, p. 242.
Ishigami Takashi
Ishihara Hideo
Ochi Yoshiharu
Shimotori Kazumi
Umeki Takenori
Kabushiki Kaisha Toshiba
Wyszomierski George
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