Highly pure sintered carbide with high electric conductivity and

Details Highly pure sintered carbide with high electric conductivity and Highly pure sintered carbide with high electric conductivity and

1989-11-06

1992-03-03

Barr, Josephine

Compositions

Electrically conductive or emissive compositions

Carbide containing

252502, 501 88, 501 90, 423345, 423346, 419 48, 419 56, 419 57, 419 14, H01B 106, C04B 3556

Patent

active

050930397

ABSTRACT:
Disclosed is an electrically conductive sintered silicon carbide body having an electric resistivity of not higher than 1 .OMEGA..multidot.cm, which is produced by

REFERENCES:
patent: 4133689 (1979-01-01), Stroke
patent: 4295890 (1981-10-01), Stroke
patent: 4370421 (1983-01-01), Matsushita et al.
patent: 4517305 (1985-05-01), Suzuki et al.
patent: 4753903 (1988-06-01), Saito
patent: 4762810 (1988-08-01), Endo et al.
John S. Nadeau, "Very High Pressure Hot Pressing of Silicon Carbide", American Ceramic Society Bulletin, Current Ceramic Research Issue, 2/73, vol. 52, pp. 170-174.
Chinone et al, "SiC Formation by CVD", New Ceramics, issue No. 10, 1989.
Takeda et al, "The Effects of Sintering Aids on Thermal Conductivity and Electrical Resistivity of Sintered SiC", Gyoukyo, vol. 95 [9], p. 30, 1987.

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