Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2011-06-21
2011-06-21
Wyszomierski, George (Department: 1733)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C148S421000
Reexamination Certificate
active
07964070
ABSTRACT:
Provided is a manufacturing method of high purity hafnium including the steps of making aqueous solution of chloride of hafnium, thereafter removing zirconium therefrom via solvent extraction, performing neutralization treatment to obtain hafnium oxide, further performing chlorination to obtain hafnium chloride, obtaining hafnium sponge via reducing said hafnium chloride, and performing electron beam melting to the hafnium sponge in order to obtain a hafnium ingot, as well as a high purity hafnium material obtained thereby and a target and thin film formed from such material. The present invention relates to a high purity hafnium material with reduced zirconium content contained in the hafnium, a target and thin film formed from such material, and the manufacturing method thereof, and provides efficient and stable manufacturing technology, a high purity hafnium material obtained according to such manufacturing technology, and a target and high purity hafnium thin film formed from such material.
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Howson & Howson LLP
JX Nippon Mining & Metals Corporation
Shevin Mark L
Wyszomierski George
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