Highly polishable, highly thermally conductive silicon carbide

Details Highly polishable, highly thermally conductive silicon carbide Highly polishable, highly thermally conductive silicon carbide

1992-10-13

1994-12-20

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

427249, 4272552, 437100, C01B 3136

Patent

active

053744128

ABSTRACT:
Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to <5 .ANG. RMS as measured on a Talystep mechanical profiler and has a thermal conductivity of at least about 300 W/mk. The silicon carbide is particularly suitable for applications where high polishability and thermal conductivity is desired, such as hard disc drives and read/write heads of head-disc assemblies, and also optical apparatus which require a very high polish.

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