Highly-oriented diamond film, method for manufacturing the...

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Reexamination Certificate

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C428S408000, C428S688000

Reexamination Certificate

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11281607

ABSTRACT:
A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]−[O])/[CH3+H2+O2] is −0.2×10−2or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.

REFERENCES:
patent: 5523160 (1996-06-01), Kobashi et al.
patent: 5529846 (1996-06-01), Hayashi et al.
Yutaka Ando et al., “Growth of Diamond Films by a 5-kW Microwave Plasma CVD Reactor”, Diamond and Related Materials Elsevier, Switzerland, vol. 10, No. 3-7, (Mar. 2001), pp. 312-315.
Hideaki Maeda et al., “Determination of Diamond [100] and [111] Growth Rate and Formation of Highly Oriented Diamond Film by Microwave Plasma-Assisted Chemical Vapor Deposition”, Journal of Materials Research, New York, NY, vol. 10, No. 12, (Dec. 1995), pp. 3115-3123.
C. Wild et al., “Chemical Vapour Deposition and Characterization of Smooth {100}-Faceted Diamond Films”, Diamond and Related Materials, Elsevier Science Publishers, Amsterdam, NL, vol. 2, No. 2/4, (Mar. 31, 1993), pp. 158-168.
V.G. Ralchenko et al., “Large-Area Diamond Deposition by Microwave Plasma”, Diamond and Related Materials, Elsevier Science Publishers, Amsterdam, NL, vol. 6, No. 2-4, (Mar. 1997), pp. 417-421.
European Search Report dated Apr. 24, 2006.
Hiroshi Kawarada, “Heteroepitaxy and Highly Oriented Diamond Deposition”, School of Science and Engineering, Waseda University, Tokyo, Springer Series in Materials Processing, 1998, pp. 140-162.

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