Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1993-05-14
1994-12-06
Loke, Steven Ho Yin
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257613, 257627, 437100, 117929, 427249, 428408, 156643, H01L 310312, H01L 2912, H01L 2904, H01L 31036
Patent
active
053713834
ABSTRACT:
A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of either (100) or (111) crystal planes, simultaneously satisfy the following relations between the adjacent crystal planes: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree..
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U.S. Patent Application Serial No. 08/035,643, filed Mar. 23, 1993, Microelectronic Structure Having an Array of Diamond Structures on a Nondiamond Substrate and Associated Fabrication Methods, Dreifus et al., pending.
Dreifus David L.
Miyata Koichi
Saito Kimitsugu
Stoner Brian R.
Kobe Steel USA Inc.
Loke Steven Ho Yin
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