Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-03-20
2007-03-20
Menz, Doug (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S038000, C257S295000, C257S421000
Reexamination Certificate
active
10316141
ABSTRACT:
MRAMs are provided with cells offering low current leakage for partially selected cells. MRAM cells are made with magnetic tunnel junctions having barriers that meet predetermined low barrier heights and predetermined thicknesses. The barrier heights are preferably about 1.5 eV or less. The predetermined thicknesses are calculated to meet power and speed requirements. The predetermined low barrier heights and predetermined thicknesses modify a nonlinear term relating current through to voltage across the magnetic tunnel junction. The modification of the nonlinear term also modifies the amount of current that flows through a magnetic tunnel junction at various voltages. At low voltages, current through the magnetic tunnel junction will be disproportionately lower than current through a conventional magnetic tunnel junction. This decreases leakage current through partially selected MRAM cells and power. At higher voltages, current through the magnetic tunnel junction is adequate for a wide variety of power and speed applications.
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DeBrosse John Kenneth
Lu Yu
Papworth Parkin Stuart Stephen
International Business Machines - Corporation
Menz Doug
Ryan & Mason & Lewis, LLP
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