Highly nonlinear magnetic tunnel junctions for dense...

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S038000, C257S295000, C257S421000

Reexamination Certificate

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10316141

ABSTRACT:
MRAMs are provided with cells offering low current leakage for partially selected cells. MRAM cells are made with magnetic tunnel junctions having barriers that meet predetermined low barrier heights and predetermined thicknesses. The barrier heights are preferably about 1.5 eV or less. The predetermined thicknesses are calculated to meet power and speed requirements. The predetermined low barrier heights and predetermined thicknesses modify a nonlinear term relating current through to voltage across the magnetic tunnel junction. The modification of the nonlinear term also modifies the amount of current that flows through a magnetic tunnel junction at various voltages. At low voltages, current through the magnetic tunnel junction will be disproportionately lower than current through a conventional magnetic tunnel junction. This decreases leakage current through partially selected MRAM cells and power. At higher voltages, current through the magnetic tunnel junction is adequate for a wide variety of power and speed applications.

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Guth et al., Tunnel magnetoresistance in magnetic tunnel junctions with ZnS barrier, APL, 78(22), p. 3487, May 2001.
Rottlander et al., Tantalum oxide as an alternative low height tunnel barrier in magnetic junctions, APL, 78(21), p. 3274, May 2001.

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