Highly linear low-noise amplifiers

Amplifiers – Hum or noise or distortion bucking introduced into signal...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C455S114300

Reexamination Certificate

active

07554397

ABSTRACT:
A predistortion method for CMOS Low-Noise-Amplifiers (LNAs) to be used in Broadband Wireless applications is presented. The method is based on the nulling of the third order Intermodulation distortion (IMD3) of the main amplifier by a highly nonlinear predistortion branch. Maximum third order product cancellation is ensured by a transformer feedback method. The technique improves linearity in a wide range of input power without significant gain and Noise Figure (NF) degradation. Simulation results on a 1-V LNA indicate a 10.3 dB improvement in the Input Third-Order Intercept Point (IIP3) with a reduction of only 1 dB and 0.44 dB in amplifier gain and NF respectively.

REFERENCES:
patent: 6259325 (2001-07-01), Ishizuka et al.
patent: 6681103 (2004-01-01), Rogers et al.
patent: 6724253 (2004-04-01), Hau et al.
patent: 6809581 (2004-10-01), Rofougaran et al.
patent: 7110742 (2006-09-01), Roufoogaran
patent: 7167044 (2007-01-01), Li et al.
patent: 7205844 (2007-04-01), Su et al.
patent: 7339436 (2008-03-01), Fu et al.
patent: 7355479 (2008-04-01), Van Der Heijden
patent: 2006/0281426 (2006-12-01), Galan
Min-Gun Kim et al., “An FET-Level Linearization Method Using a Predistortion Branch FET”, IEEE Microwave and Guided Wave Letters, Jun. 1999, pp. 233-235, vol. 9, No. 6.
David J. Cassan et al., “A 1-V Transformer-Feedback Low-Noise Amplifier for 5-GHz Wireless LAN in 0.18-μm CMOS”, IEEE Journal of Solid-State Circuits, Mar. 2003, pp. 427-435, vol. 38, No. 3.
Ram Sadhwani et al., “Adaptive CMOS Predistortion Linearizer for Fiber-Optic Links”, Journal of Lightware Technology, Dec. 2003, pp. 3180-3193, vol. 21, No. 12.
Vladimir Aparin et al., “Linearization of CMOS LNA's Via Optimum Gate Biasing”, IEEE ISCAS 2004, pp. IV-748-IV-751.
Tae Wook Kim et al., “Highly Linear Receiver Front-End Adopting MOSFET Transconductance Linearization by Multiple Gated Transistors”, IEEE Journal of Solid-State Circuits, Jan. 2004, pp. 223-229, vol. 39, No. 1.
Vladimir Aparin et al., “Modified Derivative Superposition Method for Linearizing FET Low-Noise Amplifiers”, IEEE Transactions on Microwave Theory and Techniques, Feb. 2005, pp. 571-581, vol. 53, No. 2.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Highly linear low-noise amplifiers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Highly linear low-noise amplifiers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly linear low-noise amplifiers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4140423

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.