1981-01-19
1984-12-11
Munson, Gene M.
357 30, 357 55, H01L 2978, H01L 2714, H01L 3100, H01L 2906
Patent
active
044881630
ABSTRACT:
An array of photodetectors is described incorporating a PNP vertical structure in a monosilicon substrate with individual photodetectors optically and electrically isolated from one another by open or oxide filled grooves. Both PN junctions of the PNP structure or originally reverse biased with one junction acting as the photodetector may operate in the forward biased photovoltaic mode with high radiant energy intensity. The minority carriers injected into the N region are absorbed by the other PN junction providing base-collector transistor action to prevent blooming.
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Bluzer Nathan
Borsuk Gerald M.
Kub Francis J.
Turley Alfred P.
Munson Gene M.
Sutcliff W. G.
Westinghouse Electric Corp.
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