Highly-integrated thin film capacitor with high dielectric const

Details Highly-integrated thin film capacitor with high dielectric const Highly-integrated thin film capacitor with high dielectric const

1996-04-18

1999-03-16

Reichard, Dean A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361311, 361303, 3613215, 257310, 257306, H01G 406, H01G 420

Patent

active

058837817

ABSTRACT:
In a capacitor including a silicon substrate and an insulating layer formed on the silicon substrate having a contact hole, a lower electrode layer including a silicon diffusion preventing conductive layer and an oxidation resistance conductive layer, an upper electrode layer, and a high dielectric constant layer therebetween, the silicon diffusion preventing layer is located on or within the contact hole and is isolated from the high dielectric constant layer. The high dielectric constant layer is formed on an upper surface and a side surface of the oxidation resistance conductive layer.

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P. Y. Lesaicherre Et Al., "A Gbit-scale DRAM stacked capacitor technology with ECR MOCVD SrTio.sub.3 and RIE patterned RuO.sub.2 /TiN storage nodes", pp. 34.1.1-34.1.4, San Francisco USA.
T. Eimori et al., "A Newly Designed Planar Stacked Capacitor Cell with High dielectric Constant Film for 256 Mbit DRAM", IEDM, pp. 631-634, 1993.
P-Y. Lesaicherre et al., "A Gbit DRAM stacked capacitor tehcnology with ECR MOCVD SrTio.sub.3 and RIE patterned RuO.sub.2 /TiN storage nodes", IEDM, pp. 831-834, 1994.

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