Highly integrated ternary semiconductor memory device

Static information storage and retrieval – Associative memories – Ferroelectric cell

Reexamination Certificate

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Details

C365S205000

Reexamination Certificate

active

07355873

ABSTRACT:
A TCAM (ternary content addressable memory) cell array is provided with a search input node into which one bit of search data is inputted, a plurality of data input nodes into which a bit corresponding to one bit of search data is inputted, and a plurality of memory cells arranged in rows and columns. Each of the plurality of memory cells further includes a first cell storing one bit of said storage data, and a logical operation cell determining whether or not said search data and storage data match. A gate of a transistor forming each of a plurality of memory cells extends along the direction of said rows. Each of a plurality of wells in the region where the memory array is formed is formed so as to continue to a corresponding well of an adjacent memory cell in the direction of said columns.

REFERENCES:
patent: 2003/0227788 (2003-12-01), Lien
patent: 2004/0114411 (2004-06-01), Noda et al.
patent: 2004/0208034 (2004-10-01), Lien
patent: 2005/0017284 (2005-01-01), Amo et al.
patent: 2005/0024976 (2005-02-01), Kang et al.
patent: 2005/0105315 (2005-05-01), Shin et al.
patent: 2002-74964 (2002-03-01), None
patent: 2003-141879 (2003-05-01), None
patent: 2003-297953 (2003-10-01), None

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