Highly integrated semiconductor structure providing a diode-resi

Details Highly integrated semiconductor structure providing a diode-resi Highly integrated semiconductor structure providing a diode-resi

1978-03-23

1979-10-02

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 46, 357 48, 357 51, 307317A, H01L 2704

Patent

active

041700171

ABSTRACT:
In an integrated circuit an improved highly integrated semiconductor structure for providing a Schottky diode-resistor circuit configuration is disclosed. Although not limited thereto, the improved highly integrated semiconductor structure has particular utility when employed in a monolithic memory.

REFERENCES:
patent: 3631309 (1971-12-01), Meyers
patent: 3631311 (1971-12-01), Engbert
patent: 3693057 (1972-09-01), Wiedmann
patent: 3909837 (1975-09-01), Kronlage
patent: 3940785 (1976-02-01), Genesi
patent: 3971060 (1976-07-01), Leuschner
patent: 4005469 (1977-01-01), Chang et al.
Wu, IBM Technical Disclosure Bulletin, vol. 11, No. 11, Apr. 1969, p. 1439.

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