Highly integrated semiconductor device contact structure

Details Highly integrated semiconductor device contact structure Highly integrated semiconductor device contact structure

1994-08-09

1996-05-07

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257773, 257775, H01L 2348, H01L 2352, H01L 2940

Patent

active

055149111

ABSTRACT:
The semiconductor connecting device is comprised of a device separation insulating film, a source region and a drain region formed at predetermined portions of a semiconductor substrate; an interlayer insulating film formed on the device separation insulating film and on the drain region, having a contact hole through which a portion of the device separation film is exposed along with a portion of the drain region; a conductive plug formed on the exposed portion of the drain region and on the exposed portion of the drain region within the contact hole, the drain region-sided conductive plug being thinner than the device separation insulating film-sided one; and bit lines formed on the conductive material plug and the interlayer insulating film, coming into contact with them, respectively. The bit line connected with the drain region scarcely overlaps the source region where the charge storage electrode is formed, bringing about a reduction of needed area resulting in a highly integrated semiconductor device.

REFERENCES:
Anonymous, "Lithographic Patterns with a Barrier Liner", IBM Technical Disclosure Bulletin, vol. 32, No. 10B, Mar. 1990, pp. 114-115.

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