Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1995-01-13
1997-11-11
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 94, 257 79, 257615, H01L 3300, H01L 2920
Patent
active
056867387
ABSTRACT:
This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A molecular beam source of Ga and source of activated atomic and ionic nitrogen are provided within the growth chamber. The desired film is deposited by exposing the substrate to Ga and nitrogen sources in a two step growth process using a low temperature nucleation step and a high temperature growth step. The low temperature process is carried out at 100-400.degree. C. and the high temperature process is carried out at 600-900.degree. C. The preferred source of activated nitrogen is an electron cyclotron resonance microwave plasma.
REFERENCES:
patent: 3683240 (1972-08-01), Pankove
patent: 3819974 (1974-06-01), Stevenson et al.
patent: 3829556 (1974-08-01), Logan et al.
patent: 4144116 (1979-03-01), Jacob et al.
patent: 4153905 (1979-05-01), Chamakadze et al.
patent: 4396929 (1983-08-01), Ohki et al.
patent: 4473938 (1984-10-01), Kobayashi et al.
patent: 4476620 (1984-10-01), Ohki et al.
patent: 4589015 (1986-05-01), Nakata et al.
patent: 4608581 (1986-08-01), Bagratishvilli et al.
patent: 4615766 (1986-10-01), Jackson et al.
patent: 4792467 (1988-12-01), Melas et al.
patent: 4819057 (1989-04-01), Naito et al.
patent: 4819058 (1989-04-01), Nishizawa
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 4866007 (1989-09-01), Taguchi et al.
patent: 4897149 (1990-01-01), Suzuki et al.
patent: 4911102 (1990-03-01), Manabe et al.
patent: 4918497 (1990-04-01), Edmond
patent: 4946547 (1990-08-01), Palmour et al.
patent: 4946548 (1990-08-01), Kotaki et al.
patent: 4960728 (1990-10-01), Shaake et al.
patent: 4966862 (1990-10-01), Edmond
patent: 4966867 (1990-10-01), Crotti et al.
patent: 4983249 (1991-01-01), Taguchi et al.
patent: 5005057 (1991-04-01), Izumiya et al.
patent: 5006908 (1991-04-01), Matsuoka et al.
patent: 5010033 (1991-04-01), Tokunaga et al.
patent: 5015327 (1991-05-01), Taguchi et al.
patent: 5027168 (1991-06-01), Edmond
patent: 5042043 (1991-08-01), Hatano et al.
patent: 5063421 (1991-11-01), Suzuki et al.
patent: 5068204 (1991-11-01), Kukimoto et al.
patent: 5076860 (1991-12-01), Ohba et al.
patent: 5093576 (1992-03-01), Edmond et al.
patent: 5097298 (1992-03-01), Ehara
patent: 5117267 (1992-05-01), Kimoto et al.
patent: 5119540 (1992-06-01), Kong et al.
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5140385 (1992-08-01), Kukimoto et al.
patent: 5173751 (1992-12-01), Ota et al.
patent: 5178911 (1993-01-01), Gordon et al.
patent: 5182670 (1993-01-01), Khan et al.
patent: 5192419 (1993-03-01), Matsuura et al.
patent: 5200022 (1993-04-01), Kong et al.
patent: 5205905 (1993-04-01), Kotaki et al.
patent: 5210051 (1993-05-01), Carter, Jr.
patent: 5218216 (1993-06-01), Manabe et al.
patent: 5237182 (1993-08-01), Kitagawa et al.
patent: 5243204 (1993-09-01), Suzuki et al.
patent: 5248631 (1993-09-01), Park et al.
patent: 5272108 (1993-12-01), Kozawa
patent: 5290393 (1994-03-01), Nakamura
patent: 5298767 (1994-03-01), Shor et al.
patent: 5304820 (1994-04-01), Tokunaga et al.
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5307363 (1994-04-01), Hosokawa et al.
patent: 5313078 (1994-05-01), Fujii et al.
patent: 5323022 (1994-06-01), Glass et al.
patent: 5329141 (1994-07-01), Suzuki et al.
patent: 5334277 (1994-08-01), Nakamura
patent: 5338944 (1994-08-01), Edmond et al.
patent: 5359345 (1994-10-01), Hunter
patent: 5385862 (1995-01-01), Moustakas
Maruska et al. Solid State Elec 1974 vol. 17 pp. 1171-1179 "Mechanism . . . Diodes".
Boulon et al, Philips Tech Rev. 37, pp. 237-240 1977 No. 9/10 "Light-emitting diodes based on GaN".
T. Sasaki et al., "Substrate-polarity dependence of metal-organic vapor phase epitaxy-grown GaN on SiC," J. Appl. Phys., Nov., 1988, pp. 4531-4535.
R.F. Davis et al., "Critical Evaluation of the Status of the Areas for Future Research Regarding the Wide Band Gap Semiconductors Diamond, Gallium Nitride and Silicon Carbide," Materials Science and Engineering, 1988, pp. 77-104.
S. Yoshida et al., "Epitaxial growth of GaN/AlN heterostructures," J. Vac. Sci. Technol., Apr.-Jun. 1983, pp. 250-253.
Z. Sitar et al., "Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy," J. Vac. Sci. Technol., Mar./Apr. 1990, pp. 316-322.
H. Amano et al., "UV and blue electroluminescence from Al/GaN:Mg/GaN LED Treated with low-energy electron beam irradiation (LEEBI)," Proceedings of the SPIE-The International Society for Optical Engineering, vol. 1361, Part 1, 1991, pp. 138-149.
S. Zembutsu et al., "Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy," Appl. Phys. Lett., Mar. 1986, pp. 870-872.
M.J. Paisley, "Growth of cubic phase gallium nitride by modified molecular-beam epitaxy" J. Vac. Sci. Technol., May/Jun. 1989, pp. 701-705.
T.L. Chu, "Gallium Nitride Films," J. Electrochemical Society, Jul. 1971, pp. 1200-1203.
"P-Type Conduction in MG-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)", Hiroshi Amano et al., Japanese Journal of Applied Physics, 28 No. 12, pp. L2112-L2214 (Dec., 1989).
"Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal Gan By Reactive-Ion Molecular Beam Epitaxy", R.C. Powell et al., Materials Research Society Symposium Proceedings, 162, pp. 525-530 (Nov./Dec., 1989)
"Growth of Cubic GaN Films on (100) Si by ECR Assisted MBE", T. Lei et al,. Bulletin of the American Physical Society, 36 N. 3 (Mar., 1991).
"Growth of GaN Films on the a-plane of Sapphire by ECR Assisted MBE", G. Merion et al., Bulletin of the American Physical Society, 36 No. 3 (Mar., 1991).
"Growth of Single Crystalline GaN Films on the R-plane of Sapphire by ECR Assited", C.R. Eddy et al., Bulletin of the American Physical Society, 36 No. 3 (Mar., 1991).
"Electron Beam Effects on Blue Luminescence of Zinc-Doped GaN", Hiroshi Amano et al., 40 and 41, pp. 121-122 (Feb., 1988) Jour. of Luminescence.
"Commercialization of GaN Blue LED with The Highest Reported Light Intensity in The World", unknown author, Japanese R&D Trend Analysis, 33 (Jan. 1991).
Sitar, Z., Design and Performance of an Electron Cyclotron Resonance Plasma Source for Standard Molecular Beam Epitaxy Equipment, Rev. Sci. Instrum., 61(9), Sep. 1990, pp. 2407-2411.
Kiode, et al., Effect of an A1N Buffer Layer on AlGaN/.alpha.-Al.sub.2 O.sub.3 Heteroepitaxial Growth by MOVPE (in Japanese), vol. 13, No. 4, 1986, pp. 218-225.
S. Yoshida, et al., Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates, Appl. Phys. Lett, 42(5), Mar. 1983, pp. 427-429.
H. Amano, et al., Effect Of The Buffer Layer in Metalorganic Vapour Phase Epitaxy of GaN on Sapphire Substrate, Thin Solid Films, 163, 1988, pp. 415-420.
H. Amano, et al., Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer, Appl. Phys. Lett. 48 (5), Feb. 1986, pp. 353-355.
M.R.H. Khan, et al., Edge Emission of Al.sub.x Ga.sub.1-x N, Solid State Communications, vol. 60, No. 6, 1986, pp. 509-512.
H. Amano, et al., P-Type Conduction in Mg-Doped GaN Tread with Low-Energy Electron Beam lrradiation (LEEBI), Japanese Journal of Applied Physics, vol. 28, No. 12, Dec. 1989, pp. L2112-L2114.
T. Nagatomo, et al., Epitaxial Growth of GaN films by Low Pressure Metalorganic Chemical Vapor Diposition, Abstract #1156, 104b Extended Abstracts Fall Meeting, Honolulu, Hawaii, Oct. 1987, pp. 1602-1603.
H. Kawakami, et al., Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on .alpha.-Al.sub.2 O.sub.3 Substrate, Japanese Journal of Applied Physics, vol. 27, No. 2, Feb. 1988, pp. L161-L163.
I. Akasaki, et al., Effects of AlN Buffer Layer on Crystallographic Structure and On Electrical and Optical Properties of GaN and Ga.sub.1-x Al.sub.x N (0<.times..ltoreq.0.4) Films Grown on Sapphire Substrate by MOVPE, Journal of Crystal Growth 98, 1989, pp. 209-219.
B. Goldenberg,
Jackson Jerome
Trustees of Boston University
LandOfFree
Highly insulating monocrystalline gallium nitride thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Highly insulating monocrystalline gallium nitride thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly insulating monocrystalline gallium nitride thin films will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1231354