Highly efficient compact capacitance coupled plasma...

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

Reexamination Certificate

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C422S186040, C204S173000, C204S174000, C204S175000, C204S177000

Reexamination Certificate

active

06998027

ABSTRACT:
A compact capacitively coupled electrode structure for use in a gas plasma reactor/generator is disclosed. The electrode structure comprises a parallel plate type anode and cathode spaced to define a gas flow path or volume therebetween. A plurality of electrically conductive fin elements are interposed in the space between the anode and cathode. The fin elements substantially increase the ratio of electrode surface area to volume, and subdivide the gas flow path or volume, thereby substantially increasing the efficiency of plasma gas processing that is possible over a broad range of operating parameters, without substantially increasing the spacing between the anode and cathode. Static or closed operation is also disclosed. Also disclosed is a multi-anode/multi-cathode electrode assembly embodying the basic electrode structure and a highly efficient and compact gas plasma reactor/generator employing the assembly.

REFERENCES:
patent: 3815000 (1974-06-01), Phillips et al.
patent: 3976448 (1976-08-01), Eng et al.
patent: 3979193 (1976-09-01), Sikich
patent: 4130490 (1978-12-01), Lovelace et al.
patent: 4148705 (1979-04-01), Battey et al.
patent: 4189308 (1980-02-01), Feldman
patent: 4209357 (1980-06-01), Gorin et al.
patent: 4285800 (1981-08-01), Welty
patent: 4313739 (1982-02-01), Douglas-Hamilton
patent: 4381965 (1983-05-01), Maher et al.
patent: 4438706 (1984-03-01), Boday et al.
patent: 4443409 (1984-04-01), Saccocio
patent: 4472174 (1984-09-01), Chuan
patent: 4491606 (1985-01-01), Rosler et al.
patent: 4492971 (1985-01-01), Bean et al.
patent: 4509434 (1985-04-01), Boday et al.
patent: 4526670 (1985-07-01), Hajj
patent: 4554045 (1985-11-01), Bean et al.
patent: 4631105 (1986-12-01), Carroll et al.
patent: 4644877 (1987-02-01), Barton et al.
patent: 4695358 (1987-09-01), Mizuno et al.
patent: 4735633 (1988-04-01), Chiu
patent: 4792378 (1988-12-01), Rose et al.
patent: 4887005 (1989-12-01), Rough et al.
patent: 5009738 (1991-04-01), Gruenwald et al.
patent: 5146140 (1992-09-01), Piejak et al.
patent: 5304486 (1994-04-01), Chang
patent: 5330578 (1994-07-01), Sakama et al.
patent: 5415719 (1995-05-01), Akimoto
patent: 5543688 (1996-08-01), Morita
patent: 5820947 (1998-10-01), Itoh
patent: 6007672 (1999-12-01), Saito et al.
patent: 6119455 (2000-09-01), Hammer et al.
patent: 6146599 (2000-11-01), Ruan et al.
patent: 6159432 (2000-12-01), Mallison et al.
patent: 1282732 (1991-04-01), None
patent: 215706 (1984-11-01), None
patent: 230790 (1985-12-01), None
patent: 2332418 (1974-12-01), None
patent: 3609698 (1987-09-01), None
patent: 3850816 (1988-05-01), None
patent: 0158823 (1985-10-01), None
patent: 0166846 (1986-01-01), None
patent: 0176295 (1986-04-01), None
patent: 0296720 (1988-12-01), None
patent: 0296720 (1988-12-01), None
patent: 0304824 (1989-03-01), None
patent: 0781599 (1996-07-01), None
patent: 0767254 (1997-04-01), None
patent: 0839930 (1999-05-01), None
patent: 2591509 (1987-06-01), None
patent: 2113815 (1982-08-01), None
patent: 2158055 (1986-11-01), None
patent: 51-129868 (1976-11-01), None
patent: 56-108514 (1981-08-01), None
patent: 58-006231 (1983-01-01), None
patent: 58-045718 (1983-03-01), None
patent: 60-137421 (1985-07-01), None
patent: 60-193522 (1985-10-01), None
patent: 63-31523 (1988-02-01), None
patent: 63-285936 (1988-11-01), None
patent: 08-115879 (1996-05-01), None
patent: 10-335091 (1998-12-01), None
patent: 11-005013 (1999-01-01), None
patent: WO 01/82329 (2001-11-01), None
patent: WO 0182329 (2001-11-01), None
Machine Translation of Japan 11-005013.
“Energy-Efficient Removal of Gaseous LPCVD Byproducts,”Process Technology Limited PTL NewsSpring 1986 vol. 1, No. 3 (3 pages).
Adams, A.C., “Plasma Deposition of Inorganic Films,”Solid State Technology, Dec. 1980 (5 pages).
Adams, A.C., “Silicon Nitride and Other Insulator Films,”Plasma Deposited Thin Films1986 pp. 130-133; 156-159.
Bailin et al, “Microwave Decomposition of Toxic Vapor Simulants,”Environmental Science and Technology, vol. 9, No. 3, Mar. 1975, pp. 254-257.
Bell, A, Chapter 1: Fundamentals of Plasma Chemistry,Techniques and Applications of Plasma Chemistry, pp. 1-49, Published by John Wiley & Son, Inc., New York, 1974.
Boenig, H., Properties of Glow Discharge Plasma pp. 49-53, VI Plasma Chemistry, pp. 55-74, VIII Plasma Enhanced Deposition of Films pp. 89-133,Fundamentals of Plasma Chemistry and Technology, published by Technomic Publishing Company, Lancaster, 1988.
Chiu, et al, “Plasma Etch Process Modeling: Application to A1 Etch Process Development,” 1983 pp. 294-299.
Chiu, et al, “Modeling of BPSG Film Deposition” (16 pages).
Chiu, et al, “Plasma Etch Process Modeling,” 1983 pp. 74-81.
Clothiaux et al, “Decomposition of an Organophosphorous Material in a Silent Electrical Discharge,”Plasma Chemistry and Plasma Processing, vol. 4, No. 1. 1984 pp. 15-21.
D'Agostino et al, “Chemical Mechanisms in C3F8—H2Radiofrequency Discharges,”Plasma Chemistry and Plasma Processing, vol. 4, No. 1, 1984.
Flamm, D., “The Oxidation of Methane Traces, Formation of Ozone and Formation of Noxin RF Glow and DC Corona Discharges,”TUPAC International Symposium on Plasma Chemistry, Limoges, France, Jul. 1977.
Fraser et al, “Decomposition of Methane in an AC Discharge,”Plasma Chemistry and Plasma Processing, vol. 5, No. 2 1985 pp. 163-173.
Gorczyca, et al, Chapter 4: “Plasma-Enhanced Chemical Vapor Deposition of Dielectrics,” VLSI Electronics Microstructure Science, vol. 8: Plasma Processing for VLSI, 1984 CRC Press, Inc. pp. 69-76.
Hammond, M.D., “Safety in Chemical Vapor Deposition,”Solid State Technology, Dec. 1980 (5 pages).
Hirose, M., Chapter 2: Plasma-Deposited Films; Kinetics of Formation, Composition, and Microstructure,Plasma Deposited Thin Films, 1986 pp. 28-32, 42-43.
Jacob, A., “Plasma Processing—An Art or a Science?” (5 pages).
Johnson, Wayne L., “Design of Plasma Deposition Reactors,” Solid State Technology Apr. 1983 pp. 191-195.
Kern et al, Technical Report: “Advances in Deposition Processes for Passivation Films” 1977 Applied Materials, Inc. pp. 1092-1094.
Matteson et al, Abstract: “Corona Discharge Oxidation of Sulfur Dioxide,”Environmental Sci. Tech. 6,895 (1972) (1 page).
Raoux et al, “A Plasma Reactor for Solid Waste Treatment on PECVD Production Systems”,Mat. Res. Soc. Symp. Proc. vol. 447 (1997 Materials Research Society) pp. 101-105.
Raoux et al, “Growth, Trapping and Abatement of Dielectric Particles in PECVD Systems,”Plasma Sources Sci. Technol. 6 1997 pp. 405-414.
Reif, R., “Plasma-Enhanced Chemical Vapor Deposition of Silicon Epitoxial Layers,”J. Electrochem. Soc.: Solid-State and TechnologyOct. 1984 pp. 2430-2435.
Siebert, M.E., “Vapor Decomposition by Microwave Discharge: Final Comprehensive Report,” Lockheed Missile & Space Company, Inc. Sep. 1971 pp. 1-61.
Singer, P, “Pre-pump Scrubbers Simplify Maintenance and Improve Safety,”Semiconductor International, Mar. 1992 pp. 72-74.
Venugopalan, M., Chapter Eleven: Plasma Chemistry—An Introduction, “Reaction Under Plasma Conditions—Vol. 2,” pp. 1-31, Published by John Wiley & Sons, Inc. 1971.

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