Highly doped surface layer for negative electron affinity device

Details Highly doped surface layer for negative electron affinity device Highly doped surface layer for negative electron affinity device

1992-10-13

1994-05-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 11, 313346R, 313368, H01L 2934

Patent

active

053151267

ABSTRACT:
A negative electron affinity device has acceptor dopant concentration increased proximate the emitter face of the III-V semiconductor layer and within the depletion zone effected by an overlying CsO negative electron affinity coating. Methods to accomplish dopant concentration include diffusion, ion implantation and doping during crystal growth.

REFERENCES:
patent: 3631303 (1971-12-01), Antypas et al.
patent: 3699404 (1972-10-01), Simon et al.
patent: 4099198 (1978-07-01), Howorth et al.
patent: 4344803 (1982-08-01), Kasper
patent: 4907042 (1990-03-01), Tardella et al.
patent: 5029963 (1991-07-01), Naselli et al.
patent: 5114373 (1992-05-01), Peckman
Kan et al, "New Structure GaP-GaAlP Heterojunction Cold Cathode," IEEE Transaction on Electron Devices, vol. ED-26, No. 11, Nov. 1979, pp. 1759-1766.
Milnes, Semiconductor Devices and Integrated Electronics, pp. 754-813, Van Nostrand Reinhold Co., N.Y. 1980.

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