Highly doped III-nitride semiconductors

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile

Reexamination Certificate

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C257S103000, C257SE29253, C257SE33028, C257SE33033, C257SE33034

Reexamination Certificate

active

07485901

ABSTRACT:
A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1×1020cm−3at Al mole fractions up to 65% are obtained.

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