Highly doped III-nitride semiconductors

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S099000, C257S101000, C257S102000, C257S103000

Reexamination Certificate

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06888170

ABSTRACT:
A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1×1020cm−3at Al mole fractions up to 65% are obtained. These levels of doping application of n-type bulk, and n/p tunnel injection to short wavelength UV emitters. Some applications include light emitting diodes having wavelengths between approximately 254 and 290 nm for use in fluorescent light bulbs, hazardous materials detection, water purification and other decontamination environments. Lasers formed using the highly doped layers are useful in high-density storage applications or telecommunications applications. In yet a further embodiment, a transistor is formed utilizing the highly doped layer as a channel.

REFERENCES:
patent: 4821093 (1989-04-01), Iafrate et al.
patent: 5013685 (1991-05-01), Chiu et al.
patent: RE33671 (1991-08-01), Dingle et al.
patent: 5194400 (1993-03-01), Takamori et al.
patent: 5548127 (1996-08-01), Shakuda
patent: 5602418 (1997-02-01), Imai et al.
patent: 5710058 (1998-01-01), Schneier et al.
patent: 5847397 (1998-12-01), Moustakas
patent: 6013129 (2000-01-01), Yoshida
patent: 6046464 (2000-04-01), Schetzina
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6206969 (2001-03-01), Takahashi et al.
patent: 6252287 (2001-06-01), Kurtz et al.
patent: 6323073 (2001-11-01), Yeh et al.
patent: 6361618 (2002-03-01), Nulman
patent: 6373188 (2002-04-01), Johnson et al.
patent: 20010030317 (2001-10-01), Lee et al.
patent: 20020096675 (2002-07-01), Cho et al.
patent: 20020110945 (2002-08-01), Kuramata et al.
“Essentials of the Free Electron Gas”, Semiconductor Physics, http://www.techfak.unikiel.de/matwis/amat/semi_en/kap_2/backbone/r2_1_1.html (2002), pp. 1-6.
Burm, Jinwook, et al., “Ultra Low Resistive Ohmic Contacts on n-GaN using Si implantation”,Appl. Phys. Letter, 70(4),(1997), 464-466.
Eastman, L. F., et al., “Results, Potential and Challenges of High Power GaN- Based Transistor”,Phys. Stat. Col., 176,(1999), 175-178.
Goepfert, I. D., et al., “Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1-xGaN superlattices”,JAP, 88,(2000), 2030-2038.
Hamdani, F., et al., “Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy”,Applied Physics Letters; vol. 70, No. 4,(Jan. 1997), 467-469.
Jenny, J. R., et al., “Growth kinetics of GaN grown by gas-source molecular beam epitaxy”,J. Crystal Growth, 175,(1997) 89-93.
Jeon, Seong-Ran, et al., “Lateral current spreading in GaN based light-emitting diodes utilizing tunnel contact junctions”,Appl. Phys. Letters, 78,(2001), 3265-3267.
Kikuchi, A., et al., “Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AIN intermediate layer”,Materials Science and Engineering, B82,(2001), 12-15.
Li, Y., et al., “Low-resistance ohmic contacts to p-type GaN”,Appl. Phys. Lett., 76,(2000), 2728.
Lu H., et al., “Improvement in epitaxial growth of InN by migration enhanced epitaxy”,Applied Physics Letters, 77,(2000), 2548-2550.
Murphy, M., et al., “High-frequency AIGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy”,Applied Physics Letters, 6,(1999), 3653-3655.
Ozden, I., et al., “A dual-wavelength indium gallium nitride quantum well light emitting diode”,Applied Physics Letters,(2001), pp.
Ridley, B., et al., “Mobility of Electrons in Bulk GaN and Al/sub x/Ga/sub 1- x/N/GaN Heterostructures”,Physical Review B,(2000), 2532-2534.
Sanchez-Garcia, M., et al., “MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: doping effects”,Journal of Crystals Growth, 201/202,(1999), 415-418.
Saxler, A., et al., “Electrical transport of an AlGaN/GaN two-dimensional electron gas”,Materials Research Society Symposium Proceedings, 595,(2000), 6 pages.
Sekiguchi, S., et al., “Improvement of Current Injection Uniformity and Device Resistance in Long-Wavelength Vertical-Cavity Surface-Emitting Laser using a Tunnel Junction”,Jpn. J. Appl. Phys, 39,(2000), pp. 3997-4001.
Songprakob, W., et al., “Infrared Studies of Hole-Plasmon Excitations in Heavily-doped p-type MBE-Grown GaAs:C”,Phys. Rev. B. 62.(2000), 4501-4510.
Takeuchi, T., et al., “GaN-Based Light Emitting Diodes with Tunnel Junctions”,Jpn. J. Appl. Phys., 40,(2001), L861-L863.
Hwang, Jeonghyun, et al., “Si doping of high-AI-mole fraction AlxGa1-XN alloys with rf plasma-induced molecular-beam-epitaxy”,Applied Physics Letters, vol. 81, No. 27,(Dec. 30, 2002),51925194.
Polyakov, A. Y., et al., “Properties of Si Donnors and Persistent Photoconductivity in AlGaN”,Solid-State Electronics vol. 42, No. 4,(1998),627-635.
Zhang, X. , “Growth of Al/sub x/Ga/sub 1-x/N:Ge on sapphire and silicon substrates”,Applied Physics Letters, v 67, n 12,(Sep. 1995),1745-7.
Gmachl, Claire , et al., “Intersubband Absorption in Degenerately doped GaN/AlxGa1-xNCoupled Double Quantum Wells”,Applied Physics Letters, 79(11) , (Sep. 10, 2001), 1590-1592.
Iliopoulos, E. , et al., “Broadening of Near-Band-Gap Photoluminescence in n-Gan Films”,Applied Physics Letters, 73(3), (Jul. 20, 1998),375-377.
Kasic, A. , et al., “Optical Photon Modes and Interband Transitions in Cubic AlxGa1-xN Films”,Physical Review B, 65,(Apr. 23, 2002),p. 184302-1--184302-13.
Sinharoy, S. , et al., “Molecular Beam Epitaxy Growth and Characterization of GaN and AlxGa1-xN on 6 H-SiC”,J. Vac. Sci Tehnol. A, 14(3), (May/Jun 1996),896-899.
Taga, Naoaki , et al., “Electrical Properties and Surface Morphology of Heteroepitaxial-Grown Tin-Doped Indium Oxide Thin Films Deposited by Molecular-Beam Epitaxy”,J. Vac. Sci. Technol. A, 18(4), (Jul/Aug 2000),1663-1667.

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