Highly-depleted laser doped semiconductor volume

Details Highly-depleted laser doped semiconductor volume Highly-depleted laser doped semiconductor volume

2009-01-29

2010-06-29

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S463000, C257SE31093

Reexamination Certificate

active

07745901

ABSTRACT:
A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.

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