Highly coupled superlattice integrated laser-modulator component

Details Highly coupled superlattice integrated laser-modulator component Highly coupled superlattice integrated laser-modulator component

1992-09-04

1994-04-19

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 96, 372 45, 372 20, H01S 319

Patent

active

053053435

ABSTRACT:
An integrated monolithic electrooptical component having an electrooptical modulator and a semiconductor laser on the same substrate. The modulator and laser are formed from a stack of semiconductor layers. The modulator includes one layer that is absorbent and the laser includes one layer that is active. Both absorbent and active layers are constituted by the same epitaxied structure of a highly coupled composition superlattice with alternation of semiconductor layers of different compositions. A forward voltage is applied to the laser layers that causes the active layer of the laser to emit a radiation which then traverses the absorbent layer of the modulator. A reverse voltage is applied to the modulator layers in order to modulate the absorption of the radiation traversing the modulator.

REFERENCES:
patent: 4101845 (1978-07-01), Russer
patent: 4905253 (1990-02-01), Chraplyvy et al.
Shams et al., "Monolithic Integration of GaAs-(GaAl)As Light modulators and distributed-Bragg-reflector lasers", Appl. Phys. Lett. 32(5), Mar. 1978, pp. 314-315.
Patent Abstracts of Japan, vol. 9, No. 19(E-292 [1742], Jan. 25, 1985, & JP-A-59 165 480, Sep. 18, 1984, K. Kasahara, "Semiconductor Light Emitting Element".
Applied Physics Letters, vol. 48, No. 1, Jan. 6, 1986, pp. 1-3, S. Tarucha et al., "Monolithic Integration of A Laser Diode and an Optical Waveguide Modulator Having A GaAs/A1GaAs Quantum Well Double Heterostructure".

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