Coherent light generators – Particular resonant cavity – Distributed feedback
Patent
1997-09-30
1999-11-02
Bovernick, Rodney
Coherent light generators
Particular resonant cavity
Distributed feedback
372 45, 372 46, 372 98, 372 50, H01S 308, H01S 3085
Patent
active
059784083
ABSTRACT:
The present invention provides a highly compact vertical cavity surface emitting laser structure formed by a lateral oxidation process. Specifically, the present invention allows for the use of well-controlled oxidized regions to bound and to define the aperture of a laser structure in a current controlling oxidation layer, wherein the aperture comprises a conductive region in the oxidation layer. These oxidized regions are formed by the use of a pre-defined bounding pattern of cavities etched in the laser structure, which allow the embedded oxidation layer to be oxidized, and which results in a highly reproducible and manufacturable process.
REFERENCES:
patent: 4216036 (1980-08-01), Tsang
patent: 5115441 (1992-05-01), Kopf et al.
patent: 5262360 (1993-11-01), Holonyak, Jr. et al.
patent: 5327448 (1994-07-01), Holonyak, Jr. et al.
patent: 5337074 (1994-08-01), Thornton
patent: 5359618 (1994-10-01), Lebby et al.
patent: 5373522 (1994-12-01), Holonyak, Jr. et al.
patent: 5403775 (1995-04-01), Holonyak, Jr. et al.
patent: 5493577 (1996-02-01), Choquette et al.
patent: 5550081 (1996-08-01), Holonyak, Jr. et al.
patent: 5719891 (1998-02-01), Jewell
patent: 5719892 (1998-02-01), Jiang et al.
patent: 5724374 (1998-03-01), Jewell
patent: 5729566 (1998-03-01), Jewell
patent: 5896408 (1999-04-01), Corzine et al.
M. J. Reis, T.A. Richard, S. A. Maranowski, N. Holonyak, Jr., E. I. Chen, "Photopumped Room-Temperature Edge-and Vertical-Cavity Operation of AlGaAs-GaAs-InGaAs Quantum-Well Heterostrutucre Lasers Utilizing Native Oxide Mirrors," Appl. Phys. Lett. 65(6), Aug. 8, 1994, pp. 740-742.
J.M. Dallesasse, N. Holonyak, Jr., A. R. Sugg, T. A. Richard, N. El-Zein, "Hydrolyzation Oxidation of Al.sub.x Ga.sub.1x As-A/As-GaAs Quantum Well Heterostructures and Superlattices," Appl. Phys, Lett 57 (26), Dec. 24, 1990, pp. 2844-2846.
P.D. Dapkus, M. H. MacDougal, "Ultralow Threshold Vertical Cavity Surface Emitting Lasers." http://engine.ieee.org/pubs
ewsletters/leos/dec95/ultra.htr, pp.1-7.
Yong Cheng, P. Daniel Dapkus, Fellow, IEEE, Michael H. MacDougal, Student Member, IEEE, and Gye Mo Yang, "Lasing Characterstics of High-Performance Narrow-Stripe InGaAs-GaAs Quantum-Well Lasers Confined by AIAs Native Oxide," IEEE Photonics Technology Letters, vol.8, No. 2, Feb. 1996, pp. 176-178.
S. J. Caracci, F. A. Kish. N. Holonyak, Jr., S. A. Maranowski. S. C. Smith, R. D. Burnham, "High-Performance Planar Native-Oxide Buried-Mesa Index-Guided AlGaAs-GaAs Quantum Well Heterostructure Lasers," Appl. Phys. Lett. 61(3), Jul. 20, 1992, pp. 321-323.
K. L. Lear, K. D. Choquette, R. P. Schneider, Jr., S. P. Kilcoyne, K. M. Geib, "Selectively Oxidised Vertical Cavity Surface Emitting Lasers with 50% Power Conversion Efficiency," Electronic Letters Online No: 19950125, Dec. 7, 1994, pp.
Bovernick Rodney
Kim Sung T.
Xerox Corporation
LandOfFree
Highly compact vertical cavity surface emitting lasers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Highly compact vertical cavity surface emitting lasers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly compact vertical cavity surface emitting lasers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2145731