Highly compact EPROM and flash EEPROM devices

Details Highly compact EPROM and flash EEPROM devices Highly compact EPROM and flash EEPROM devices

1991-10-15

1993-12-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 49, 257320, H01L 2960

Patent

active

052683184

ABSTRACT:
Structures, methods of manufacturing and methods of use of electrically programmable read only memories (EPROM) and flash electrically erasable and programmable read only memories (EEPROM) include split channel and other cell configurations. An arrangement of elements and cooperative processes of manufacture provide self-alignment of the elements. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algorithm prolongs the useful life of the memory cells. Use of these various features provides a memory having a very high storage density and a long life, making it particularly useful as a solid state memory in place of magnetic disk storage devices in computer systems.

REFERENCES:
patent: 4380863 (1983-04-01), Mohan Rao
patent: 4409723 (1983-10-01), Harari
patent: 4734887 (1988-03-01), Sugatani
patent: 4888734 (1989-12-01), Lee et al.
patent: 5095344 (1992-03-01), Harari
patent: 5168465 (1992-12-01), Harari
patent: 5198380 (1993-03-01), Harari
Masuoka et al., "A New Flash E2PROM Cell Using Triple Polysilicon Technology", IEDM, 84, pp. 464-467, (1984).

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