Highly charged ion modified oxide device and method of...

Stock material or miscellaneous articles – Magnetic recording component or stock – Magnetic head

Reexamination Certificate

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C428S811500, C428S552000, C428S611000, C428S639000, C428S640000, C428S655000, C428S686000, C428S687000, C428S131000, C428S312200, C428S312800, C428S409000, C360S324200

Reexamination Certificate

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07914915

ABSTRACT:
A highly charged ion modified device is provided that includes a first metal layer or layers deposited on a substrate and an insulator layer, deposited on the first metal layer, including a plurality of holes therein produced by irradiation thereof with highly charged ions. The metal of a further metal layer, deposited on the insulator layer, fills the plurality of holes in the insulator layer.

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Grube, H.,Pomeroy, J., Perrella, A., and Gillaspy, J., Mater. Res. Soc. Symp. Proc 960E, 0960-N08-02, pp. 1-6, 2007.
Pomeroy, J., Grube, H., Perrella, A., Sosolik, C., and Gillaspy, J, Nuc. Ins. Met. Phs. Res. B., 256, 319-323, 2007.
Pomeroy, J., Grube, H., Perrella, A., and Gillaspy, J., App. Phy. Let., 91, 073506, 2007.
Pomeroy, J., Grube, H., Perrella, A., and Gillaspy, J., Nuc. Ins. Met. Phys. Res. B., 258, 189-193, 2007.
Grube et al., “Highly Charged Ion Modified Magnetic Tunnel Junctions,” Mater. Res. Soc. Symp. Proc. 960E, Warrendale, PA, 2007, 0960-N08-02.
Gillaspy et al., “The Potential of Highly Charged Ions: Possible Future Applications,” 2007, pp. 451-456, Journal of Physics: Conference Series 58.

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