Fishing – trapping – and vermin destroying
Patent
1988-06-08
1989-11-21
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 4, 357 2, 156643, 156646, H01L 3110, H01L 3118
Patent
active
048822965
ABSTRACT:
A highly blocking diode structure having a thin film a-Si:H (amorphous silicon containing hydrogen) layer, suitable for use in constructing image sensor arrays, has two conductive electrodes disposed on opposite sides of the a-Si:H thin film layer. The structure is constructed on an electrically insulating substrate and includes a barrier layer disposed between the a-Si:H layer and the top electrode. The top electrode may consist of indium tin oxide or of palladium silicide, and the barrier layer may consist of silicon oxide produced by converting the surface of the a-Si:H layer. The barrier layer is disposed on that side of the a-Si:H layer opposite the substrate. The barrier layer significantly improves the behavior of the contacts and the stability of the boundary surface between the a-Si:H layer and the transparent metal oxide comprising the electrode. The sequence for constructing the diode arrangement is considerably simplifed.
REFERENCES:
patent: 4282537 (1981-08-01), Balberg
patent: 4291318 (1981-09-01), Sansregret
patent: 4398054 (1983-08-01), Madan
patent: 4484809 (1984-11-01), Coleman
patent: 4554478 (1985-11-01), Shimomoto et al.
patent: 4569719 (1986-02-01), Coleman
Brunst Gerhard
Hoheisel Martin
Holzenkaempfer Enno
Hearn Brian E.
Nguyen Tuan
Siemens Aktiengesellschaft
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