Higher selectivity, method for passivating short circuit...

Semiconductor device manufacturing: process – Making passive device

Reexamination Certificate

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Details

C428S014000, C428S038000, C428S088000, C428S190000, C428S210000, C257SE21056

Reexamination Certificate

active

07923341

ABSTRACT:
A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.

REFERENCES:
patent: 5084400 (1992-01-01), Nath et al.

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