Higher power semiconductor radiating mirror laser

Oscillators – Molecular or particle resonant type

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331 945H, 331 945P, H01S 318

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active

041964020

ABSTRACT:
Radiating mirror lasers in which a semiconductor active element containing an appropriately fabricated heterostructure configuration is formed as one end mirror of a two-mirror resonant cavity. The active element is fabricated from an alloy semiconductor compound such a lead salt alloy, the bandgap of which may be varied by varying the relative composition of its constituents. By properly selecting the compound and its composition, lasers may be made for operation at wavelengths that span the ultraviolet, visible and infrared portions of the spectrum. The lasers combine the inherently high power characteristics of a radiating mirror structure with a wide spectral coverage. Arrangements are disclosed for increasing power efficiencies, for tuning the operating wavelength over a wide range and for otherwise improving the utility of the lasers.

REFERENCES:
patent: 3794844 (1974-02-01), Dimmock et al.
Bogdankevich et al, "Semiconductor Electron-Beam-Pumped Lasers of the Radiating Mirror Type," IEEE Journal of Quantum Electronics, vol. QE-9, No. 2, Feb. 1973, pp. 342-347.
C. Fonstad, "High Power, Beam Pumped Radiating Mirror Geometry (Pb,Sn) Te Lasers at 16 .mu.m for Isotope Separation" MIT Research in Materials Annual Report, Jan. 1977, pp. 75-76.
M. B. Parish, "Heterostructure Injection Lasers" IEEE Transactions on Microwave Theory and Techniques, vol. MTT-23, No. 1, Jan. 1975, pp. 20-30.
S. H. Groves et al, "Double Heterostructure Pb.sub.1-x Sn.sub.x Te-PbTe Lasers with cw Operation at 77K," Applied Physics Letters, vol. 25, No. 6, Sep. 15, 1974, pp. 331-333.

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