Higher power gallium nitride schottky rectifier

Details Higher power gallium nitride schottky rectifier Higher power gallium nitride schottky rectifier

1999-03-31

2000-07-25

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Specified materials

257 76, 257472, H01L 27095

Patent

active

060939524

ABSTRACT:
A Schottky high power rectifier having a nitride insulator formed on the surface of a GaN substrate. The nitride insulator increases the electric field breakdown suppression at or near the surface of the rectifier below the insulator. In a preferred embodiment, the nitride insulator is an epitaxially grown aluminum nitride insulator.

REFERENCES:
patent: 5210051 (1993-05-01), Carter, Jr.
patent: 5990531 (1993-05-01), Taskar et al.

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